Dielectric relaxation in Si—SiO2—Cr structures

The dielectric behavior of thermally grown SiO
2
was examined using Si-SiO
2
-Cr structures. The relaxation spectrum exhibits a time dependence indicative of diminishing charge-carrier concentration. The relaxation process is characterized by activation energies of 29-32 kcal/mole; this, together with the considerably higher loss measured in specimens contaminated with Na
2
CO
3
, suggests sodium as the carrier source.