Numerical solutions for a one-dimensional silicon n-p-n transistor

This paper describes a technique of obtaining numerical solutions of the basic carrier transport equations for a semiconductor and the results of some calculations pertaining to a silicon n-p-n transistor. The calculations include dc characteristics in direct and inverse operation, saturation parameters, and small-signal ac common emitter
h
-parameters. Both Boltzmann and Fermi statistics have been used, and the dependence of carrier mobilities on electric field has been taken into account.