Small-signal high-frequency response of the insulated-gate field-effect transistor

A complete solution is presented for the small-signal high-frequency response of an idealized model of the insulated-gate field-effect transistor. The
y
parameters are found by solving Bessel's equation and are plotted as functions of signal frequency and the quiescent conditions. In addition to these general results, simple approximate results that apply only beyond the point of pinch-off are derived for operation at moderately low frequencies.