A slide rule for computing UFand the bulk doping from MIS-capacitor high-frequency C-V curves

A slide rule has been developed for the rapid and accurate calculation of the normalized doping parameter U
F
and the bulk doping of silicon substrates from high-frequency MIS-capacitor
C-V
data. The slide rule can be employed for ambient temperatures from -20 to 100°C, and for a wide range of insulator thicknesses and dielectric constants.