Temperature dependence of the saturation current of MOST's

The saturation current of
n
-enhancement silicon MOST's has been investigated as function of temperature. The results are in reasonable agreement with a simple theoretical expression which takes into account the field dependence of electron mobility. It is shown that the effective incremental mobility becomes fairly independent of temperature, and varies inversely proportional to the gate voltage V
G
, if
\micro V_{G}/\upsilon_{s}L
is about unity, where µ is the low-field drift mobility, υ
s
, is the saturation drift velocity, and
L
is the channel length.