High-efficiency X-band GaAs IMPATT diodes

Epitaxial GaAs diodes have been fabricated giving 65
¹
mW CW output power at 10 GHz under room temperature operation. A dc to RF efficiency of 10.1 percent was obtained from a diode operating CW while the measured output of another diode was over 20 mW for 3 mA dc with 70-volt biasing.