Reverse characteristics of Mo-Si epitaxial Schottky diodes

The characteristics of a metal-semiconductor Schottky barrier diode, in which the semiconductor part consists of a heavily doped substrate (
\sim 10^{-3}
Ω.cm) with a thin (∼ 1 µ) epitaxial layer which is much less heavily doped (-∼ 1 Ω.cm) on top of it, were studied. The electric field distribution calculations showed that, for all practical cases, the penetration of the depletion layer into the substrate could be neglected. Expressions for the capacitance-voltage characteristics, the image force barrier lowering effects, and the avalanche breakdown voltages were derived. The expressions can be verified experimentally on Mo-Si Schottky diodes.