Electron drift velocity in avalanching silicon diodes

The differential resistance of an avalanching p
⁺
nn
⁺
junction is used to obtain the electron drift velocity at electric fields where significant avalanching is occurring (2 × 10
⁵
< E < 4 × 10
⁵
V/cm). The velocity is also obtained as a function of temperature and is consistent with energetic phonon scattering.