Measurement of conduction band discontinuity in pseudomorphic In/sub x/Ga/sub 1-x/As/In/sub 0.52/Al/sub 0.48/As heterostructures

The current-voltage-temperature (I-V-T) measurement technique is applied, in conjunction with capacitance-voltage (C-V) measurements, to n/sup +/-In/sub x/Ga/sub 1-x/As/In/sub 0.52/Al/sub 0.48/As/n/sup -/-In/sub 0.53/ Ga/sub 0.47/As semiconductor-insulator-semiconductor (SIS) capacitors. The compositional dependence of the conduction band discontinuity over the range of 0.43 >