The growth of high quality InP/InGaAs/InGaAsP interfaces by CBE for SCH multi-quantum well lasers

The growth of bulk InGaAsP and heterointerfaces of InP/InGaAs and InGaAsP/InGaAs by chemical beam epitaxy for use in multiple quantum well separate confinement heterostructure (MQW-SCH) lasers is discussed. InGaAsP has been successfully grown for lambda =1.1, 1.2, and 1.4 mu m, and a strong dependence on substrate temperature has been observed for the In and Ga incorporation rates. InP/InGaAs and InGaAsP/InGaAs quantum wells have been grown to determine the optimum gas switching sequence that minimizes the measured photoluminescence FWHM. Lattice matched MQW-SCH lasers grown using different interface switching sequences are described. The best laser is shown to have a threshold current density of 854 A/cm/sup 2/ for an 800 mu m*90 mu m broad area device.<
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