A metal-insulator-piezoelectric semiconductor electromechanical transducer

A deposited metal-insulator-piezoelectric-semiconductor (MIPS) transistor can be used as an electromechanical transducer, because of the sensitivity of the power-gain mechanism in a surface field-effect device to fixed charge in the channel. Close correspondence has been obtained between the theory of this effect and experimental observations on deposited CdS MIPS devices. The transducer action described in this paper is quite different from that employed in other piezoelectric pressure transducers, and has beneficial characteristics such as high sensitivity and flat gain to high frequencies. Comparisons with conventional transducers are made, and design considerations of the MIPS transducer are discussed.