Influence of lattice parameter variations across n-InP-substrates on a complex of material properties of InP/InGaAsP-DHS

Precision lattice parameter and photoluminescence measurements of InP substrates and InP/InGaAsP double heterostructures (DHSs) are presented. The measurements show a lattice dilatation in a region with enriched free carrier concentration achieved by using strong n-type doped InP substrates of