The growth of MQW planar buried heterostructure lasers with semi-insulating blocking layers by OMVPE

The growth of suitable semi-insulating (SI) material for buried heterostructure (BH) lasers and the material's electrical characteristics under single and double carrier injection conditions are described. The difficulty of regrowth of InP around mesas is discussed. It is necessary to grow a thick SI layer for maximum resistance, and to achieve a planar surface to enable electrical contact to be made to the device. Threshold currents as low as 7 mA, output powers of over 20 mW and modulation bandwidths up to 8 GHz have been measured for a laser with highly resistive planar SI layers.<
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