Accurate noise measurements on transistors

This paper is concerned with a method of noise measurement which permits improved accuracy by circumventing some of the problems of the usual comparison techniques. Results are presented of measurements of I
eq
and R
n
showing good agreement between theory and experiment. It is suggested that noise measurements may be a very satisfactory method of determining the effective base resistance for inhomogeneous structures. The theoretical representation of the noise sources, including the effect of generation-recombination in the emitter-base region, is summarized in the appendix.