The vacuum evaporation of single crystal thin films of silicon

Using a vacuum of about 10
^-6
mm, single crystal silicon films have been evaporated onto a silicon substrate. Source and substrate temperatures and the rate of deposition are critical parameters in attaining epitaxy with the substrate. Where the source silicon is heated in a crucible, the crucible material is important. Physical imperfections, doping and electrical characteristics of the films are discussed, together with devices made from them.