Fully working high performance multi-channel field effect transistor (McFET) SRAM cell on bulk Si substrate using TiN single metal gate

We demonstrate for the first time high performance titanium nitride (TiN) single metal gate 65nm CMOS McFET (multichannel field effect transistor) SRAM cell transistor on bulk Si wafer. This single metal gate McFET shows suitable threshold voltage (VT) and excellent transistor characteristics of SS (sub-threshold swing) and DIBL (drain induced barrier lowering) with V/sub TN/ =+0.3V and V/sub TP/=-0.3V. The SRAM cell with this CMOS McFET, high static noise margin (SNM) of 350mV is achieved at 1.0V.