High sensitivity Si-based backward diodes for zero-biased square-law detection and the effect of post-growth annealing on performance

High-sensitivity Si-based backward diodes were realized that are monolithically integratable with transistor circuitry. Potential applications include large area focal plane arrays. The Si-based backward diodes exhibit a high zero-biased curvature coefficient, /spl gamma/, of 31 V/sup -1/ and a low zero biased junction capacitance, C/sub j/, of 9 fF/μm
²
, all at room temperature. The predicted low frequency voltage sensitivity, /spl beta//sub V/, for a 50 /spl Omega/ source is 3100 V/W. The high sensitivity, low junction capacitance, and Si/SiGe heterojunction bipolar transistor compatibility of the Si-based backward diodes make them very attractive for zero-bias square-law detector applications.