Application of FeCoB high-Hk hetero amorphous thin film to RF integrated inductor

In this work, the Q value twice as high as the existing report at 2 GHz band using newly developed high-B and high-Hk FeCoB hetero amorphous thin film is demonstrated. The ferromagnetic thin film was deposited by RF magnetron sputtering. The value Q=9 was obtained for the 20/2 design and Q=10 for the 18/4 design at 2 GHz. This was possible because of high FMR frequency of the hetero amorphous Co/sub 27/Fe/sub 62/B/sub 11/ film and the smooth surface for the magnetic film deposition defined by the CMP process.