Ultra-low-noise, 8.3 GHz dielectric resonator oscillator

A parallel feedback 8.3-GHz dielectric resonator oscillator (DRO) was designed by evaluating the residual phase noise of the GaAs FET amplifier and the resonant structure (RS). The resonant structure consists of two-port, dielectric resonator coupled to 50- Omega microstrip lines housed inside a copper cavity. The DRO has been shown to have excellent phase noise and temperature stability. The oscillator is small in size (2.54 cm*2.54 cm*2.54 cm) and offers a spurious-free output spectrum. The loaded-Q enhancement of the dielectric resonator and the noise degradation of unpackaged GaAs FET and bipolar junction transistor (BJT) amplifiers at 77 K are reported.<
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