Proposal of an analysis model of resist edge roughness caused by polymer-aggregate detachment in electron beam lithography

In low dose electron beam exposure, the number of scattering events is decreased and the local deposited energy is fluctuated. These are known to be the major reason for resist edge roughness in electron beam lithography, and they have been discussed using Monte Carlo simulation of electron trajectories.[l] However, it is found that not only these facts, but also characteristics of resist polymer aggregates affect the LER seriously.[2] In the present paper we discuss the influence of polymer-aggregate detachment for the resist LER.