20 nm periodical pattern by calixarene resists: comparison of CMC[4]AOMe with MC[6]AOAc

By using two calixarene resists, p-chloromethyl-methoxy-calix[4]arene (CMC[4]AOMe)’) and p-methylacetoxycalix[6]arene (MC[6]AOAc) ’), 20 nm periodical pattems were drawn on Si substrates. The number of collapsed lines by CMC[4]AOMe was clearly less than that by MCC61AOAc. Moreover, minimum line edge roughness (LER) of CMC[4]AOMe was two times smaller than that of MC[6]AOAc. These results indicated high resolution of CMC[4]AOMe