A ballistic nano-scale open dot in an inas/algasb system fabdeated using afm oxidation and wet etching

We investigate transport properties in a ballistic nano-scale open dot structure in an 1nAsiAlGaSb system fabricated using AFM oxidation and two-step wet etching process. This process provides a simple and useful means to explore the phenom ena such as electron interference prominent in nano-scale open dot structures. We fabricated a 300 nm InAsiAlGaSb open dot structure. In the open dot, a ballistic weak localization and oscillatory behavior in the magnetoresistance were clearly observed. The result indicates that the electron interference m the InAs/AlGaSb open dot is strong even at 4.2 K.