Simulation of low-energy ion implantation process by atomistic modeling

In this paper, we report the formation of defects during ion implantation by employing a molecular dynamics (MD) simulation of the ion implantation for nano-scale devices with ultra-shallow junctions. In order to model the profile of ion distribution in nanometer scale, the molecular dynamics is employed while the Kinetic Monte Carlo (KMC) dihsion model is used for an annealing effect between cascades.