Development of amorphous polyphenol resists with low molecular weight and narrow dispersion for EB lithography

Minimum feature size in LSI circuit geometry will reach 20 nm in the coming 45 nm technology node. In order to achieve this, various new lithography technologies, such as EB and EUV lithography, are now being intensively developed. Furthermore, accuracy to within 10% of the feature size is required to guarantee the performance of LSI systems. In many cases, this requires controlling feature size with accuracy of one molecule in circuit geometry with sizes corresponding to ten molecules. The aim of this study is to develop a new resist material platform, which achieves this molecular level accuracy with high productivity, We confirmed the effects of suppressing material dispersion by using amorphous low molecular weight polyphenols as resist resin.