Assessing GaAs high-speed-switching JFET device models: 1- versus 2-dimensional analysis

The general results and conclusions of these researchers and others investigating 1- and 2-dimensional device models for high-speed low-power GaAs switching JFET's are briefly reviewed and summarized. Guidelines for assessing 1- or 2-dimensional device model adequacy based upon device geometries and dopings are proposed.