A vertically guided MEMS probe card with deeply recessed trench-type cantilever

We developed a vertically guided MEMS probe card with deeply recessed trench-type cantilever. This probe card was designed to achieve a displacement of 50 /spl mu/m at a force of 1.5 gram. The measured contact resistance was about 0.4 ohm for 50 /spl mu/m displacement. The leakage current between the shortest tips was approximately 10 pA. To implement fine pitch and make a vertically guided structure, a cantilever beam was formed inside the trench after deep RIE silicon etching. This probe card was capable of a 35 /spl mu/m pad pitch.