Effect of undepleted high-resistivity region on microwave efficiency of GaAs IMPATT diodes

Degradation of the microwave efficiency due to the undepleted high-resistivity epitaxial region was experimentally found to be remarkably, small on GaAs X-band conventional-type IMPATT diodes. The result seems to be consistent with large low-field drift mobility for electrons in GaAs. Present study confirms the superiority of n-GaAs over other materials for IMPATT diode use.