Schottky-barrier devices with low barrier height

It is calculated that the barrier height of the Schottky diode has an optimum value of ∼0.3 V for the detector, the harmonic generator, and the frequency converter at high frequency. The low barrier height can be realized by the mixed crystal (n-type) composed of InAs (i.e., In
x
Ga
1-x
As,InAs
y
P
1-y
, and In
x
Ga
1-x
As
y
P
1-y
).