Electrical characteristics of 500-bit Al-Al2O3-Al CCD shift registers

Double-level metallization (Al-Al
2
O
3
-Al) 64-b and 500-b linear, n-channel, surface-channel charge-coupled device (CCD) shift registers (with 929 µm
²
(1.44 mil
²
) area per bit) show charge transfer efficiencies of 99.98 percent at 1-MHz data rates. Results indicate advantages for the Al-Al
2
O
3
-Al metallization system in ease of fabrication, reliability, clocking, charge carrying capability, and high-speed operation of large arrays.