Domain transit-mode oscillation in planar-type Gunn device of InP

Transit-mode Gunn oscillations with a peak-to-valley ratio of 2.1 in current waveforms were observed in planar-type devices of InP in a field ranging from 6 to 10 kV/cm. Even in 3-level theory, the effective diffusion coefficient is not large enough to suppress the buildup of high-field domains.