Computer simulations of the large signal characteristics of supercritical GaAs transferred electron amplifiers

The large signal characteristics of supercritically doped n
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-n-n
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GaAs transferred electron amplifiers are investigated in computer simulations. Device admittance, reflection gain in a 50-Ω circuit, available net output power, and efficiency are presented as a function of mean-square voltage across the device. Good agreement with published experimental amplifier results [1] is demonstrated.