DC and microwave performance of a 0.1 mu m gate InAs/In/sub 0.52/Al/sub 0.8/As MODFET

The authors have measured and analyzed the performance characteristics of 0.1- mu m gate InAs/In/sub 0.52/Al/sub 0.48/ MODFETs grown by molecular beam epitaxy. The transistors are characterized by measured g/sub m/(max)=840 mS/mm, f/sub T/=128 GHz, and a very high current carrying capability, e.g. I/sub dss/=934 mA/mm at V/sub gs/=0.4 V and V/sub ds/=2.7 V. The value of f/sub T/ is estimated from extrapolation of the current gain (H/sub 21/) at a -6 dB/octave rolloff. This is the first report on the microwave characteristics of an InAs-channel MODFET and establishes the superiority of this heterostructure system.<
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