Double-pulse charge pumping in MOSFETs

A double-pulse charge-pumping (DPCP) method is described. The method enables measuring of an energy distribution of interface states in both the lower and upper halves of bandgap and allows determination of capture cross section energy distribution for electrons in the upper half of the bandgap in n-channel MOSFETs and for holes in the lower half in p-channel MOSFETs. The method supplements the CP method's family. Its major advantage consists in enhanced immunity against the parasitic geometrical components of the CP current.<
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