Photodetection using photomagnetoelectric and Dember effects in gold-doped silicon

Photodetection in the visible and near IR wavelength region using photomagneto-electric and Dember effects in gold-doped silicon has been demonstrated in this note. Response time t
r
of 0.2 µs and noise equivalent power (NEP) of 6 × 10
^-10
for a photomagnetoelectric (PME) cell, and t
r
< 0.03 µs and NEP = 2.5 × 10
^-10
for a Dember cell, were obtained from the present results.