Microwave mixer and detector diodes

Recent advances in microwave mixer and detector diodes are reviewed. Devices considered are germanium back diodes, silicon and gallium arsenide point-contact diodes, and Schottky-barrier diodes. Current work on low-barrier (n-type) Schottky diodes and high-burnout point-contact diodes is also described. Experimental results of CW and RF pulse burnout of these devices are summarized. Different approaches to improve the power-handling capability of Schottky diodes at S-, X-, and K
u
-band frequencies are considered.