X-band silicon TRAPATT diodes

Pulsed TRAPATT diodes have been successfully operated in X-band with 20 percent efficiency and 15 W output power. The diodes operate at the first subharmonic of the IMPATT frequency. Similar diodes have yielded 35 percent efficiency at 5.3 GHz as oscillators, and 54 percent efficiency at 3 GHz as RF triggered amplifiers.