Mobility modulation in a quasi-one-dimensional Si-MOSFET with a dual-gate structure

The electrical transport characteristics of a quasi-one-dimensional Si-MOSFET with a dual-gate structure are studied. In this device, the width of the one-dimensional channel can be changed continuously using the field effect and the intervals between one-dimensional subbands as well. By making part of the channel narrower, strong oscillations in differential conductance, even negative differential conductance, have been observed at 4.2 K, indicating the enhanced modulation of the electron mobility by inter-subband scattering suppression.<
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