The performance of IMPATT diodes under the influence of high-intensity gamma and neutron radiation

IMPATT diodes were tested under the influence of up to 1.5 × 10
⁷
R/h gamma radiation and 3 × 10
¹²
N/cm
²
/s fast neutrons. Major changes were noted in power output, frequency spectrum, and current-voltage characteristics. Permanent damage and total failure resulted from this test.