Computer simulation of LSA oscillators with high doping to frequency ratios

Computer simulations of twice oversized n-GaAs diodes with random doping fluctuations operated in a transmission line (multiresonant) circuit are presented. LSA operation in this multiresonant circuit, which provides an RF square wave voltage across the diode, has been obtained for n/f ratios as high as 1 × 10
⁶
s/cm
³
.