A new junction design on a Permalloy corner pattern for ion-implanted and Permalloy hybrid bubble memory devices

A junction has been developed for hybrid bubble memory devices using ion-implanted tracks for high density data storage and Permalloy tracks for write and read functions. An 18- mu m diameter Permalloy corner pattern is used. Both the tapered ion-implanted edges and the operating bias field adjustment boundary at the junctions are located under the Permalloy corner pattern edges. Improved junction properties and analysis by visual inspection are reported. The bubble potentials and the phase of the rotating field, when a bubble reaches the junction boundary, were compared for the conventional and the corner-type junctions. Replicate gate performance for the corner-type junction was investigated. The replicate phase margin was greatly improved for the enlarged Permalloy corner pattern. The temperature dependences of the junction performance were measured between 0 and 80 degrees C. In this temperature range, the margins of the junctions were improved, making them suitable for hybrid bubble memory devices.<
>