Extraction of channel length and junction voltage in n/sup +//n/n/sup +/ or n/sup +//p/n/sup +/ polysilicon resistors

A method for extraction of channel length and junction voltage of poly-Si resistors is presented. Direct extraction of channel length can be performed for n/sup +//n/n/sup +/ resistors operating in the nonlinear I-V regime. However, poly-Si resistors may have channel doping opposite to that of the source/drain doping. For this case, a method is presented for extraction of the current-dependent voltage drop across the drain n/sup +//p junction. Importantly, this junction voltage drop can be an appreciable fraction of the drain-to-source bias and thus is important for correct analysis of n/sup +//p/n/sup +/ resistors.<
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