A macroscopic physical model and capacitive response of the buried oxide having a transition layer in a SIMOX substrate

This paper proposes a macroscopic physical model for the buried oxide having a transition layer in a SIMOX substrate to estimate the parasitic capacitance. The Clausius-Mossotti relationship for two media is introduced into the model, employing an empirical factor to match with a high-frequency response. Peaks in the capacitance dependence on frequency appear only in devices with the buried oxide having a transition layer. This property can be explained by the proposed model. It is also shown that the transition layer adjacent to buried oxide should be eliminated to reduce parasitic capacitance.<
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