Electrical isolation of MQW InGaAsP/InP structures by MeV iron ion implantation for vertical PIN modulators and photodiodes

Implantation-induced electrical isolation is a well known method in III-V semiconductor technology for the creation of local high resistivity regions in electronic and optoelectronic devices. In this paper, we demonstrate for the first time the fabrication of low leakage current (nA) planar vertical PIN modulators and detectors directly from epitaxial material using multiple energy Fe/sup +/ implant isolation in intentionally doped p- and n-type InP, and intrinsic multiple quantum well (MQW) InGaAsP layers.