Structural modifications of InAs based materials for mid-infrared optoelectronic devices

Anisotropic and isotropic etchants are very useful in preparation of lnAs based devices, Polycarboxylic acids are very interesting as stroctural and selective etchants and Brrbased systems have been found to give good results for chemical polishing and etching of A3B5 semiconductors, We investigated both systems with a view towards applications in InAs based optoelectronic devices.