Effect of enhanced hydrostatic pressure at annealing on self- implanted silicon

Recovery of crystalline structure of se'f - implanted silicon (Si:Si, implantation with st at E = 50 keY, dose = 1xl0
⁷
cm
²
)treated at up to 1400 K (HT) under hydrostatic pressure (HP) up to 1.1 CPa was investigated by photoluminescence (PL) and X-ray methods. Mobility and recombination of silicon vacancies and self-interstitials are affected by HP, in turn exerting influence on re-crystaliizatioll at HT of amorphous / dislocated Si produced by implantation. Si:Si treated at (920- 1070) K - HP indicate the presence of defects / dislocations, their concentrations are dependent on HP and HT. The treatment of Si:Si at 1400 K leads to recovery of the crystalline perfection, almost complete for the case of treatment under 1.1 GPa.