New results of low temperature PECVD amorphous silicon carbide

Nitrogen-doped amorphous silicon carbide films were grown by a plasma enhanced chemical vapour deposition (PE CVD) technique. The actual amount of nitrogen in the SiC films was determined by Rutherford backseat/ering. spectrometry (RBS). For irradiation experiments we used electron beams with a kinetic energy 200 keV a pulse duration of 300 ns, and a beam current of 150 A/cm
²
. It was found that with increased nitrogen doping and following activation of dopants the resistivity of the amorphoWl SiC films was substantially reduced.