Scaling properties of GOI MOSFETs in nano scale by full band Monte Carlo simulation

The characteristics of both n- and p- GOI MOSFETs are simulated by 2D self-consistent full-band MC method based on quantum Boltzmann equation to evaluate the scaling behaviors between GOI and SOI MOSFETs. The simulation results indicate that both for n and p channel GOI MOSFETs have favorable scaling properties in nano-scale due to the non-stationary transport near source side especially for p channel device. But the surface roughness scattering is a critical issue that might suppress the non-stationary transport. SCE is serious in GOI devices and much thinner Ge layer has to use to optimize the performance.