A study of the static and multigigabit dynamic effects of gain spectra carrier dependence in semiconductor lasers using a transmission-line laser model

The addition of carrier diffusion and gain curve peak carrier dependence to the transmission-line laser model allows the study of both the temporal and the spectral effects of this dependence. The model, including a photodiode model, is described and results for a static 860-nm device and an 8-Gb/s bit-sequence-modulated 1550-nm constricted-mesa device compare favorably with the previously obtained numerical, analytical, and experimental data.<
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