Homoepitaxial growth and hot-wall low-pressure chemical vapor deposition reactor MOS structures of 4H-SiC on off-oriented n-type (0001) Si-faces

Homoepitaxial growth of 4H-SiC on off-oriented n-type Si-face (0001) substrates was performed in a home-made hot-wall low-pressure chemical vapor deposition (LPCVD) reactor with SiH/sub 4/ and C/sub 2/H/sub 4/ at temperature of 1500 C and pressure of 20 torr. The surface morphology and intentional in-situ NH/sub 3/ doping in 4H-SiC epilayers were investigated by using atomic force microscopy (AFM) and secondary ion mass spectroscopy (SIMS). Thermal oxidization of 4H-SiC homoepitaxial layers was conducted in a dry O/sub 2/ and H/sub 2/ atmosphere at a temperature of 1150 C. The oxide was investigated by employing X-ray photoelectron spectroscopy (XPS). 4H-SiC MOS structures were obtained and their C-V characteristics are presented.