The temperature characteristics of AlGaN/GaN double heterostructure HEMTs

AlGaN/GaN double heterostructure high electron mobility transistors (DH-HEMT's) with a 2.0 /spl mu/m gate length and a 4 /spl mu/m channel length, exhibiting good temperature characteristics, have been demonstrated. The maximum drain current I/sub ds/ and extrinsic transconductance G/sub m/ are 1300 mA/mm 235 mS/mm, 85.0 mA/mm 174 mS/mm, and 475 mA/mm, 95 mS/mm, respectively at T = -194/spl deg/C, 20/spl deg/C and 400/spl deg/C. The temperature coefficient of I/sub ds/ and G/sub m/ are -1.4 mA//spl deg/C and 0.24 mS//spl deg/C respectively.